 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BFR 92W NPN Silicon RF Transistor * For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA * Complementary type: BFT 92W (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 92W P1s Q62702-F1488 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 2.5 30 4 mW 280 150 - 65 ... + 150 - 65 ... + 150 230 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 86 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-10-1996 BFR 92W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V A 10 nA 100 A 100 40 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-10-1996 BFR 92W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 0.43 0.25 0.7 - GHz pF 0.6 dB 1.8 2.9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 13 7.5 15.5 10 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-10-1996 BFR 92W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.733 0.46227 10.729 0.01 14.998 0.29088 0.70618 0.3817 0 0.4085 0 0 0.99545 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0947 129.55 0.8983 0.75557 0.01652 0.13793 0.34686 0.32861 946.47 0.13464 0.75 1.11 300 fA fA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-10-1996 BFR 92W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS 10 2 Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-10-1996 BFR 92W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.9 6.0 GHz pF 5.0 Ccb 0.7 fT 4.5 4.0 3.5 0.6 3.0 2.5 0.5 2.0 1.5 0.4 1.0 0.5 0.3 0 4 8 12 16 V VR 22 0.0 0 5 10 15 20 25 10V 3V 2V 1V 0.7V mA IC 35 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 dB 14 10V 5V 3V 12 10 8 6 4 2 0 -2 -4 -6 0 5 10 15 20 25 0.7V 1V 2V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 dB 10V 5V G G 8 6 3V 2V 4 2 0 -2 -4 -6 0 0.7V 1V mA IC 35 5 10 15 20 25 mA IC 35 Semiconductor Group 6 Dec-10-1996 BFR 92W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 18 VCE = Parameter, f = 900MHz 25 IC=15mA dB 0.9GHz 5V 4V 3V G 14 0.9GHz 12 10 8 6 4 2 0 0 2 4 6 8 10 V 13 V CE 1.8GHz IP3 dBm 15 2V 1.8GHz 10 1V 5 0 0 5 10 15 20 mA IC 30 Power Gain Gma, Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) VCE = Parameter 28 IC=15mA dB IC=15mA G 26 22 S21 20 16 18 14 10 10V 6 2 0.7V -2 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 -4 0.0 0.5 1.0 1.5 2.0 2.5 3V 1V 4 10V 2V 1V 0.7V GHz f 3.5 12 8 0 Semiconductor Group 7 Dec-10-1996 |
Price & Availability of BFR92W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |